这个算是这几天的大事了吧、、transistor size在不断变小,但金属层之间的contact resistance越到后面就越降不下来,Applied Materials的重大突破能让它降下来。
The heart of the problem is that in the existing manufacturing process, tungsten contacts must be clad in a layer of titanium nitride. The process involves first forming a hole in a layer of dielectric to contact the transistor, then adding a layer of titanium nitride to line that hole and the surface of the dielectric. The next step uses a process called chemical vapor deposition to put tungsten on all the surfaces at once, growing from the nitride layer inwards within the holes until the hole is filled. Finally, the surface layer of tungsten is removed, leaving just the nitride-clad contacts.
The problem is that even as the diameter of the contact has been shrunk down, the thickness of the cladding has not. In 7-nanometer chips today, contacts are only 20 nanometers wide, and only 25 percent of their volume is tungsten, explains Chen. The rest is cladding.
In July, Applied Materials released a machine that can make tungsten contacts with no cladding at all, reducing resistance by 40 percent. This “selective gapfill process” deposits tungsten from the bottom of the contact hole up instead of on all the surfaces at once. Because it uses a different chemistry than the previous process, there’s no need for a liner’s adhesion enhancement nor its fluorine-blocking ability. However, the process does need to be accomplished completely in a vacuum, so the company built it around a sealed system capable of moving wafers through multiple process steps without exposing them to air.
https://t.cn/A6UCS3vy
[喵喵][喵喵]
The heart of the problem is that in the existing manufacturing process, tungsten contacts must be clad in a layer of titanium nitride. The process involves first forming a hole in a layer of dielectric to contact the transistor, then adding a layer of titanium nitride to line that hole and the surface of the dielectric. The next step uses a process called chemical vapor deposition to put tungsten on all the surfaces at once, growing from the nitride layer inwards within the holes until the hole is filled. Finally, the surface layer of tungsten is removed, leaving just the nitride-clad contacts.
The problem is that even as the diameter of the contact has been shrunk down, the thickness of the cladding has not. In 7-nanometer chips today, contacts are only 20 nanometers wide, and only 25 percent of their volume is tungsten, explains Chen. The rest is cladding.
In July, Applied Materials released a machine that can make tungsten contacts with no cladding at all, reducing resistance by 40 percent. This “selective gapfill process” deposits tungsten from the bottom of the contact hole up instead of on all the surfaces at once. Because it uses a different chemistry than the previous process, there’s no need for a liner’s adhesion enhancement nor its fluorine-blocking ability. However, the process does need to be accomplished completely in a vacuum, so the company built it around a sealed system capable of moving wafers through multiple process steps without exposing them to air.
https://t.cn/A6UCS3vy
[喵喵][喵喵]
#尹正[超话]#
刚才看到有个姐妹说想要看尹正快跑合集
那我就来了
(不是全部版,大家还有随意补充[爱你])
首先我心中的第一
BV1f54y1X7eb 由程二爷hy引发的骚话(强推!!每日一遍远离抑郁)
BV1a7411y7Vy
BV1HA411h7c2
BV1gZ4y147mW
BV1be411s7ni
BV1Pf4y1S7CR
BV1Vk4y1R7qv
BV1kZ4y1j7dw
BV1vA41187k1
(有人觉着不妥,我立马圆润地滚出去删掉[允悲])
刚才看到有个姐妹说想要看尹正快跑合集
那我就来了
(不是全部版,大家还有随意补充[爱你])
首先我心中的第一
BV1f54y1X7eb 由程二爷hy引发的骚话(强推!!每日一遍远离抑郁)
BV1a7411y7Vy
BV1HA411h7c2
BV1gZ4y147mW
BV1be411s7ni
BV1Pf4y1S7CR
BV1Vk4y1R7qv
BV1kZ4y1j7dw
BV1vA41187k1
(有人觉着不妥,我立马圆润地滚出去删掉[允悲])
Bedenimiz çelege meňzeýär, ýüregimiz çelekdäki hapalanan suw ýalydyr. Näme üçin ýürek hapalanýar? Açgözlik, gabanjaňlyk we samsyklyk we köp obsesif häsiýetler sebäpli "akyl" tebigy taýdan hapalanýar we akyl arassa däl. Daşarky zatlara seretseňiz hakykaty görüp bilmersiňiz we görýänleriňiziň hemmesi ýalan. Palçyk suwdan doldurylan aýna çüýşe ýaly. Aýna çüýşäniň beýleki tarapyna palçyk suwdan seredip, aýdyň görüp bilersiňizmi? Açyk görmeli däl.
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